Infineon IRF9540NPBF

P-канал100 V23A (Tc)4 В @ 250 мкА140 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Features

HEXFET® Series
Tube Package
MOSFET (Metal Oxide) Technology
100 V Drain to Source Voltage (Vdss)
23A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
117mOhm @ 11A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
97 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1300 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
140W (Tc) Power Dissipation (Max)
Through Hole Mounting Type