Infineon IPW60R060C7

N-канальный600 V35A (Tc)4 В @ 800 мкА162 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The IPW60R045CPXK is MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP, that includes Tube Packaging, they are designed to operate with a IPW60R045CP IPW60R045CPFKSA1 SP000067149 Part Aliases, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Transistor Type is 1 N-Channel, the device is offered in 431 W Pd Power Dissipation, the device has a 2.1 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is 60 A, and the Vds Drain Source Breakdown Voltage is 600 V, and Rds On Drain Source Resistance is 450 mOhms, and the Transistor Polarity is N-Channel.

IPW60R045CP/6R045 with EDA / CAD Models manufactured by INF. The IPW60R045CP/6R045 is available in TO-247 Package, is part of the IC Chips.

Features

CoolMOS™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
600 V Drain to Source Voltage (Vdss)
35A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
60mOhm @ 15.9A, 10V Rds On (Max) @ Id, Vgs
4V @ 800µA Vgs(th) (Max) @ Id
68 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
2850 pF @ 400 V Input Capacitance (Ciss) (Max) @ Vds
162W (Tc) Power Dissipation (Max)
Through Hole Mounting Type