Infineon IPD60N10S4L12ATMA1

N-канальный100 V60A (Tc)2,1 В @ 46 мкА94 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The IPD60N10S4L-12 is MOSFET N-Ch 100V 60A DPAK-2, that includes XPD60N10 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a IPD60N10S4L12ATMA1 IPD60N10S4L12XT SP000866550, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PG-TO252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 94 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 21 ns, and the Rise Time is 3 ns, and Vgs Gate Source Voltage is +/- 16 V, and the Id Continuous Drain Current is 60 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 1.6 V, and Rds On Drain Source Resistance is 9.8 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 20 ns, and the Typical Turn On Delay Time is 4 ns, and Qg Gate Charge is 38 nC, and the Channel Mode is Enhancement.

IPD60N03LG with circuit diagram manufactured by INF. The IPD60N03LG is available in TO252 Package, is part of the IC Chips.

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial