ST STF20NK50Z

N-канальный500 V17A (Tc)4,5 В @ 100 мкА40 Вт (Тс)150°C (TJ)Сквозное отверстие

Overview

The STF20NF20 is MOSFET N-CH 200V 18A TO-220FP, that includes STripFET? Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.011640 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3 Full Pack, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Through Hole, the device is offered in 1 Channel Number of Channels, the device has a TO-220FP of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 30W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 200V, and the Input Capacitance Ciss Vds is 940pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 18A (Tc), and Rds On Max Id Vgs is 125 mOhm @ 10A, 10V, and the Vgs th Max Id is 4V @ 250μA, and Gate Charge Qg Vgs is 39nC @ 10V, and the Pd Power Dissipation is 90 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 30 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 18 A, and Vds Drain Source Breakdown Voltage is 200 V, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 125 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 40 ns, and the Typical Turn On Delay Time is 15 ns, and Qg Gate Charge is 28 nC, and the Forward Transconductance Min is 13 S, and Channel Mode is Enhancement.

The STF20NF06L is MOSFET N-CH 60V 20A TO-220FP manufactured by ST. The STF20NF06L is available in TO-220-3 Full Pack Package, is part of the FETs - Single, , and with support for MOSFET N-CH 60V 20A TO-220FP, N-Channel 60V 20A (Tc) 28W (Tc) Through Hole TO-220FP.

Features

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitance

Applications

■ Switching applications