Infineon IPG20N04S4L08ATMA1

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)40V20A8,2 мОм @ 17 А, 10 В2,2 В @ 22 мкА

Overview

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement modeAEC qualifiedMSL1 up to 260°C peak reflow175°C operating temperatureGreen Product (RoHS compliant)

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
40V Drain to Source Voltage (Vdss)
20A Current - Continuous Drain (Id) @ 25°C
8.2mOhm @ 17A, 10V Rds On (Max) @ Id, Vgs
2.2V @ 22µA Vgs(th) (Max) @ Id
39nC @ 10V Gate Charge (Qg) (Max) @ Vgs
3050pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
54W Power - Max
Surface Mount Mounting Type

Applications

IPG20N04S4L08ATMA1 Features

 

100% Avalanche tested

175??C operating temperature

Green Product

MSL1 up to 260??C peak reflow

AEC Q101 qualified

 

 

IPG20N04S4L08ATMA1 Applications

 

Small loads control switching

Body applications