Infineon IDH10SG60C

SiC (карбид кремния) Шоттки600 V10A

Overview

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Features

CoolSiC™+ Series
Bulk Package
SiC (Silicon Carbide) Schottky Technology
600 V Voltage - DC Reverse (Vr) (Max)
10A Current - Average Rectified (Io)
2.1 V @ 10 A Voltage - Forward (Vf) (Max) @ If
No Recovery Time > 500mA (Io) Speed
0 ns Reverse Recovery Time (trr)
90 µA @ 600 V Current - Reverse Leakage @ Vr
290pF @ 1V, 1MHz Capacitance @ Vr, F
Through Hole Mounting Type