Infineon FF23MR12W1M1B11BOMA1

Карбид кремния (SiC)2 N-канала (сдвоенные)1200 В (1,2 кВ)50A23 мОм @ 50 А, 15 В5,55 В @ 20 мА

Overview

The FF225R17ME3 is IGBT Modules N-CH 1.7KV 340A, that includes IGBT Silicon Modules Product, they are designed to operate with a Screw Mounting Style, Package Case is shown on datasheet note for use in a Econo D, that offers Configuration features such as Dual, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 40 C, the device can also be used as 1700 V Collector Emitter Voltage VCEO Max. In addition, the Continuous Collector Current at 25 C is 340 A, the device is offered in +/- 20 V Maximum Gate Emitter Voltage.

FF225R17ME4_B11 with EDA / CAD Models manufactured by Infineon. is part of the IGBTs - Modules, , and with support for IGBT Modules IGBT Module 225A 1700V.

Features

CoolSiC™+ Series
Tray Package
Silicon Carbide (SiC) Technology
1200V (1.2kV) Drain to Source Voltage (Vdss)
50A Current - Continuous Drain (Id) @ 25°C
23mOhm @ 50A, 15V Rds On (Max) @ Id, Vgs
5.55V @ 20mA Vgs(th) (Max) @ Id
125nC @ 15V Gate Charge (Qg) (Max) @ Vgs
3950pF @ 800V Input Capacitance (Ciss) (Max) @ Vds
20mW Power - Max
Chassis Mount Mounting Type
Module Package / Case
Module Supplier Device Package

Applications

·High Frequency Switching application

·DC/DC converter Solar applications

·UPS systems

FF23MR12W1M1B11BOMA1      Features

·High current density

·Low inductive design

·Low switching losses

Integrated NTC temperature sensor

·PressFIT contact technology

Rugged mounting due to integrated mounting clamps