Infineon BGS12AL7-4E6327

Общее назначениеПоверхностный монтаж

Overview

The BGS12AL7-4E6327 General Purpose RF MOS switch is designed to cover a broad range of applications from 30 MHz to 3 GHz. The symmetric design of its single pole double throw configuration offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 21 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.4 dB in the 1 GHz and 0.5 dB in the 2 GHz range. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.

Features

Applications

• Cellular/PCS Base Stations
• ISM
• Wireless Local Loop
• Smartphones
• Tablets
• Mobile devices
• Smart metering
• Cellular infrastructures
• LTE diversity applications
• WCDMA diversity applications