Silicon Labs SI4010-C200RGT

Overview

The SI3993DV-T1-GE3 is MOSFET 2P-CH 30V 1.8A 6-TSOP, that includes TrenchFETR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Part Aliases is shown on datasheet note for use in a SI3993DV-GE3, that offers Unit Weight features such as 0.000705 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23-6 Thin, TSOT-23-6 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 6-TSOP, and the Configuration is Dual, and FET Type is 2 P-Channel (Dual), and the Power Max is 830mW, and Transistor Type is 2 P-Channel, and the Drain to Source Voltage Vdss is 30V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 1.8A, and Rds On Max Id Vgs is 133 mOhm @ 2.2A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 5nC @ 4.5V, and the Pd Power Dissipation is 830 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 1.8 A, and Vds Drain Source Breakdown Voltage is - 30 V, and the Rds On Drain Source Resistance is 133 mOhms, and Transistor Polarity is P-Channel.

SI4010C2 with EDA / CAD Models manufactured by sili. The SI4010C2 is available in SOP14 Package, is part of the RF Transmitters.

Features