ON NUS6160MNTWG

Внутренний переключатель1

Overview

The NUS5530MNR2G is IC MOSFET W/PNP SW TRANS 8-DFN, that includes NUS5530MN Series, they are designed to operate with a Cut Tape (CT) Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.001319 oz, that offers Mounting Style features such as SMD/SMT, Current Rating is designed to work in 2A PNP, 3.9A P-Channel, as well as the 8-VDFN Exposed Pad Package Case, the device can also be used as Si Technology. In addition, the Mounting Type is Surface Mount, the device is offered in 35V PNP, 20V P-Channel Voltage Rated, the device has a General Purpose of Applications, and Supplier Device Package is 8-DFN-EP (3.3x3.3), and the Transistor Type is NPN, P-Channel, and Pd Power Dissipation is 635 mW, and the Vgs Gate Source Voltage is - 35 V, and Id Continuous Drain Current is - 3.9 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Rds On Drain Source Resistance is 200 Ohms, and the Transistor Polarity is P-Channel, and Forward Transconductance Min is 12 S.

The NUS5531MTR2G is MOSFET/BJT SGL P-CH 12V 8-WDFN, that includes General Purpose Applications, they are designed to operate with a 2A PNP, 5.47A P-Channel Current Rating, Mounting Type is shown on datasheet note for use in a Surface Mount, that offers Package Case features such as 8-WDFN Exposed Pad, Packaging is designed to work in Tape & Reel (TR), as well as the 8-DFN (3x3) Supplier Device Package, the device can also be used as PNP, P-Channel Transistor Type. In addition, the Voltage Rated is 20V PNP, 12V P-Channel.

Features