ON NTP60N06

N-канальный60 V60A (Ta)4 В @ 250 мкА2,4 Вт (Ta), 150 Вт (Tj)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The NTP5864NG is MOSFET N-CH 60V 63A TO-220, that includes NTP5864N Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 107 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 63 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 12.4 mOhms, and Transistor Polarity is N-Channel.

NTP5863N with circuit diagram manufactured by ON. The NTP5863N is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 60V 97A TO-220AB.

Features

• Exceptional dv/dt capability

• Avalanche tested

• Drain to source voltage (Vds) of 60V

• Gate to source voltage of ±20V

• Continuous drain current (Id) of 60A

• Power dissipation (Pd) of 150W

• Operating junction temperature range from -55°C to 175°C

Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits