ON FGA25N120ANTDTU-F109

1200 V50 A4,1 мДж (вкл.), 960 мкДж (выкл.)-55°C ~ 150°C (TJ)К-3П-3, СК-65-3

Overview

The FGA25N120ANTDTU is IGBT 1200V 50A 312W TO3P, that includes Tube Alternate Packaging Packaging, they are designed to operate with a FGA25N120ANTDTU_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.225789 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-3P-3, SC-65-3, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-3P, the device is offered in Single Configuration, the device has a 312W of Power Max, and Reverse Recovery Time trr is 350ns, and the Current Collector Ic Max is 50A, and Voltage Collector Emitter Breakdown Max is 1200V, and the IGBT Type is NPT and Trench, and Current Collector Pulsed Icm is 90A, and the Vce on Max Vge Ic is 2.65V @ 15V, 50A, and Switching Energy is 4.1mJ (on), 960μJ (off), and the Gate Charge is 200nC, and Td on off 25°C is 50ns/190ns, and the Test Condition is 600V, 25A, 10 Ohm, 15V, and Pd Power Dissipation is 312 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 1200 V, and Collector Emitter Saturation Voltage is 2 V, and the Continuous Collector Current at 25 C is 50 A, and Gate Emitter Leakage Current is +/- 250 nA, and the Maximum Gate Emitter Voltage is +/- 20 V, and Continuous Collector Current Ic Max is 50 A.

FGA25N120ANTD with EDA / CAD Models manufactured by FSC. The FGA25N120ANTD is available in TO-3P Package, is part of the IGBTs - Single.

Features

• NPT Trench Technology, Positive Temperature Coefficient

• Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C

• Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C

• Extremely Enhanced Avalanche Capability

Applications

• Induction Heating

• Microwave Oven