ON FDN352AP

P-канал30 V1,3 А (Ta)2,5 В @ 250 мкА500 мВт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

Features

PowerTrench® Series
Bulk Package
MOSFET (Metal Oxide) Technology
30 V Drain to Source Voltage (Vdss)
1.3A (Ta) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
180mOhm @ 1.3A, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
1.9 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
±25V Vgs (Max)
150 pF @ 15 V Input Capacitance (Ciss) (Max) @ Vds
500mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type