ON FDD8424H

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы40V9A, 6.5A24 мОм @ 9 А, 10 В3 В @ 250 мкА

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
40V Drain to Source Voltage (Vdss)
9A, 6.5A Current - Continuous Drain (Id) @ 25°C
24mOhm @ 9A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
20nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1000pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
1.3W Power - Max
Surface Mount Mounting Type