NXP J112,126

40 V50 ОмTO-226-3, TO-92-3 (TO-226AA) Формируемые выводы

Overview

The J112 is JFET N-CH 35V 625MW TO92, that includes Bulk Packaging, they are designed to operate with a J112_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.007090 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-226-3, TO-92-3 (TO-226AA), as well as the Through Hole Mounting Type, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in N-Channel FET Type, the device has a 625mW of Power Max, and Voltage Breakdown V BRGSS is 35V, and the Current Drain Idss Vds Vgs=0 is 5mA @ 15V, and Voltage Cutoff VGS off Id is 1V @ 1μA, and the Resistance RDS On is 50 Ohm, and Pd Power Dissipation is 625 mW, and the Rds On Drain Source Resistance is 50 Ohms, and Transistor Polarity is N-Channel, and the Vgs Gate Source Breakdown Voltage is - 35 V, and Gate Source Cutoff Voltage is - 5 V.

The J111RLRP is JFET N-CH 35V 0.35W TO92 manufactured by ON. The J111RLRP is available in TO-226-3, TO-92-3 (TO-226AA) Formed Leads Package, is part of the JFETs (Junction Field Effect), , and with support for JFET N-CH 35V 0.35W TO92, Trans JFET N-CH 20mA 3-Pin TO-92 T/R.

Features

Bulk Package
40 V Voltage - Breakdown (V(BR)GSS)
40 V Drain to Source Voltage (Vdss)
5 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
1 V @ 1 µA Voltage - Cutoff (VGS off) @ Id
6pF @ 10V (VGS) Input Capacitance (Ciss) (Max) @ Vds
50 Ohms Resistance - RDS(On)
400 mW Power - Max
150°C (TJ) Operating Temperature
Through Hole Mounting Type