Microchip DN2540N3-G

N-канальный400 V120 мА (Tj)1 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The DN2535N5-G is MOSFET 350V 25Ohm, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 15 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 20 ns, and Rise Time is 15 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 500 mA, and the Vds Drain Source Breakdown Voltage is 350 V, and Rds On Drain Source Resistance is 25 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 15 ns, and the Typical Turn On Delay Time is 10 ns, and Channel Mode is Depletion.

The DN2535N5 is MOSFET N-CH 350V 500MA TO220-3 manufactured by SI. The DN2535N5 is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 350V 500MA TO220-3, Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220.

Features

Applications

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching